ON Semiconductor NTH4LN019N65S3H
Product Information
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 650V 75A (Tc) 625W (Tc) Through Hole TO-247-4
Vgs(th) (Max) @ Id:
4V @ 14.3mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
282nC @ 10V
Rds On (Max) @ Id, Vgs:
19.3mOhm @ 37.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
15993pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
625W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTH4LN019N65S3H. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTH4LN019N65S3H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20965815 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20965815.
Yes. We ship NTH4LN019N65S3H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTH4LN019N65S3H. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 650v 75a (tc) 625w (tc) through hole to-247-4. The typical Vgs (th) (max) of the product is 4v @ 14.3ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. The maximum gate charge and given voltages include 282nc @ 10v. It has a maximum Rds On and voltage of 19.3mohm @ 37.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 15993pf @ 400v. The product is available in through hole configuration. The product superfet® iii, is a highly preferred choice for users. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 625w (tc). This product use mosfet (metal oxide) technology.
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