Renesas Electronics America Inc N0413N-ZK-E1-AY
Product Information
The N0413N-ZK-E1-AY is a versatile and reliable N-channel MOSFET from Renesas Electronics America Inc. that delivers exceptional performance in a compact package. Its low on-resistance and advanced features enable efficient power switching and control in various applications.
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Ta), 119W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5550 pF @ 25 V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D²Pak)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
N0413N-ZK-E1
ECCN:
EAR99
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FAQs
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A reliable N-channel MOSFET designed for high-performance applications is the N0413N-ZK-E1-AY from Renesas Electronics America Inc. This TO263 package MOSFET offers excellent power handling capabilities with a voltage rating 40V and a current rating of 100A. It is a flexible option for various demanding applications due to its high voltage and current ratings and the TO263 package.
The N0413N-ZK-E1-AY MOSFET stands out for its robust design, allowing it to handle high voltages up to 40V. This voltage rating makes it suitable for various applications, including power supplies, motor control, and industrial automation. Additionally, with a high current rating of 100A, it can handle substantial power loads effectively.
Designed with low on-resistance (RDS(on)) characteristics, the N0413N-ZK-E1-AY MOSFET minimises power losses, increasing energy efficiency. It enables efficient power management, reducing heat dissipation and improving system reliability.
The TO263 package used in the N0413N-ZK-E1-AY MOSFET offers significant advantages. It provides excellent thermal performance and easy installation and mounting on circuit boards. The package's compact size ensures space-saving in applications where board real estate is a constraint.
The N0413N-ZK-E1-AY MOSFET incorporates various protection mechanisms to safeguard against electrical faults and abnormal operating conditions. These features include overcurrent protection, overtemperature protection, and overvoltage protection, ensuring the longevity and safety of the MOSFET and the connected circuitry.
Application Flexibility of Renesas Electronics America Inc N0413N-ZK-E1-AY:
Featuring high voltage and current ratings, efficient power handling, and robust protection, the N0413N-ZK-E1-AY MOSFET is well-suited for many applications. It can be utilised in switch-mode power supplies, motor drives, battery management systems, robotics, and other high-power industrial and automotive applications.
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