Vishay Siliconix SIHFL110TR-BE3
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
540mOhm @ 900mA, 10V
FET Type:
N-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
180 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHFL110
ECCN:
EAR99
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FAQs
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Yes. We ship SIHFL110TR-BE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIHFL110TR-BE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. The maximum gate charge and given voltages include 8.3 nc @ 10 v. It has a maximum Rds On and voltage of 540mohm @ 900ma, 10v. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta), 3.1w (tc). The product's input capacitance at maximum includes 180 pf @ 25 v. It has a long 10 weeks standard lead time. The product is available in surface mount configuration. sot-223 is the supplier device package value. The continuous current drain at 25°C is 1.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihfl110, a base product number of the product. The product is designated with the ear99 code number.
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