Vishay Siliconix IRFR1N60ATRPBF-BE3

IRFR1N60ATRPBF-BE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Rds On (Max) @ Id, Vgs:
7Ohm @ 840mA, 10V
FET Type:
N-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
229 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFR1
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is IRFR1N60ATRPBF-BE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 14 nc @ 10 v. It has a maximum Rds On and voltage of 7ohm @ 840ma, 10v. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 36w (tc). The product's input capacitance at maximum includes 229 pf @ 25 v. It has a long 10 weeks standard lead time. The product is available in surface mount configuration. to-252aa is the supplier device package value. The continuous current drain at 25°C is 1.4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irfr1, a base product number of the product. The product is designated with the ear99 code number.

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IRFx1N60A, SIHFx1N60A(Datasheets)

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FAQs

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