This is manufactured by ON Semiconductor. The manufacturer part number is FCPF600N60ZL1-F154. Base Part Number: fcpf600. It features n-channel 600v 7.4a (tj) 28w (tc) through hole to-220f. The product's input capacitance at maximum includes 1120pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product superfet® iii, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 26nc @ 10v. It has a maximum Rds On and voltage of 600mohm @ 3.7a, 10v. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 28w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 7.4a (tj). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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This is manufactured by ON Semiconductor. The manufacturer part number is FCPF600N60ZL1-F154. Base Part Number: fcpf600. It features n-channel 600v 7.4a (tj) 28w (tc) through hole to-220f. The product's input capacitance at maximum includes 1120pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product superfet® iii, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 26nc @ 10v. It has a maximum Rds On and voltage of 600mohm @ 3.7a, 10v. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 28w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 7.4a (tj). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.