ON Semiconductor FCPF260N65FL1-F154

ON Semiconductor

Product Information

Base Part Number:
FCPF260
Detailed Description:
N-Channel 650V 15A (Tc) 36W (Tc) Through Hole TO-220F
Input Capacitance (Ciss) (Max) @ Vds:
2340pF @ 100V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 1.5mA
Series:
FRFET®, SuperFET® II
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Rds On (Max) @ Id, Vgs:
260mOhm @ 7.5A, 10V
Supplier Device Package:
TO-220F
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
36W (Tc)
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FCPF260N65FL1-F154. Base Part Number: fcpf260. It features n-channel 650v 15a (tc) 36w (tc) through hole to-220f. The product's input capacitance at maximum includes 2340pf @ 100v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 1.5ma. The product frfet®, superfet® ii, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 60nc @ 10v. It has a maximum Rds On and voltage of 260mohm @ 7.5a, 10v. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 36w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 15a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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