Transphorm TP65H480G4JSG-TR

TP65H480G4JSG-TR Transphorm
Transphorm

Product Information

Rds On (Max) @ Id, Vgs:
560mOhm @ 3.4A, 8V
Detailed Description:
N-Channel 650V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
400V @ 760pF
Drive Voltage (Max Rds On, Min Rds On):
8V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.8V @ 500µA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±18V
Gate Charge (Qg) (Max) @ Vgs:
8V @ 8nC
Supplier Device Package:
3-PQFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
13.2W (Tc)
Current - Continuous Drain (Id) @ 25°C:
3.6A (Tc)
Technology:
GaNFET (Gallium Nitride)
Manufacturer:
Transphorm
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This is manufactured by Transphorm. The manufacturer part number is TP65H480G4JSG-TR. It has a maximum Rds On and voltage of 560mohm @ 3.4a, 8v. It features n-channel 650v 3.6a (tc) 13.2w (tc) surface mount 3-pqfn (5x6). The product's input capacitance at maximum includes 400v @ 760pf. The drive voltage (maximum and minimum Rds On) of the product includes 8v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.8v @ 500µa. The product has a 650v drain to source voltage. The maximum Vgs rate is ±18v. The maximum gate charge and given voltages include 8v @ 8nc. 3-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 3-smd, flat lead. The product carries maximum power dissipation 13.2w (tc). The continuous current drain at 25°C is 3.6a (tc). This product use ganfet (gallium nitride) technology. The transphorm's product offers user-desired applications.

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