STMicroelectronics [EC] STP30N65M5
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Product Information
Detailed Description:
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-220AB
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
STP30N
Gate Charge (Qg) (Max) @ Vgs:
64nC @ 10V
Rds On (Max) @ Id, Vgs:
139mOhm @ 11A, 10V
FET Type:
N-Channel
Manufacturer:
STMicroelectronics [EC]
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2880pF @ 100V
Mounting Type:
Through Hole
Series:
MDmesh™ V
Supplier Device Package:
TO-220AB
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Customer Reference:
Power Dissipation (Max):
140W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship STP30N65M5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics [EC]. The manufacturer part number is STP30N65M5. It features n-channel 650v 22a (tc) 140w (tc) through hole to-220ab. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: stp30n. The maximum gate charge and given voltages include 64nc @ 10v. It has a maximum Rds On and voltage of 139mohm @ 11a, 10v. It carries FET type n-channel. The stmicroelectronics [ec]'s product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 2880pf @ 100v. The product is available in through hole configuration. The product mdmesh™ v, is a highly preferred choice for users. to-220ab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 22a (tc). The product carries maximum power dissipation 140w (tc). This product use mosfet (metal oxide) technology.
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