Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
13 A
Channel Mode:
Enhancement
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
360 mO
Package Type:
TO-220
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 800V 13A (Tc) 96W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
3.8V @ 300µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
NTP360
Gate Charge (Qg) (Max) @ Vgs:
25.3nC @ 10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 6.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1143pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Customer Reference:
Power Dissipation (Max):
96W (Tc)
Technology:
MOSFET (Metal Oxide)
