ON Semiconductor NVHL060N090SC1

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
N-Channel 900V 46A (Tc) 221W (Tc) Through Hole TO-247-3
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3 Variant
Base Part Number:
NVHL060
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 15V
Rds On (Max) @ Id, Vgs:
84mOhm @ 20A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 450V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Customer Reference:
Power Dissipation (Max):
221W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVHL060N090SC1. It has typical 39 weeks of manufacturer standard lead time. It features n-channel 900v 46a (tc) 221w (tc) through hole to-247-3. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3 variant. Base Part Number: nvhl060. The maximum gate charge and given voltages include 87nc @ 15v. It has a maximum Rds On and voltage of 84mohm @ 20a, 15v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v. The on semiconductor's product offers user-desired applications. The product has a 900v drain to source voltage. The maximum Vgs rate is +19v, -10v. The product's input capacitance at maximum includes 1770pf @ 450v. The product is available in through hole configuration. The product automotive, aec-q101, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 46a (tc). The product carries maximum power dissipation 221w (tc). This product use sic (silicon carbide junction transistor) technology.

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Datasheet Correction 04/May/2021(PCN Design/Specification)
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Packing quantity increase 25/Jun/2021(PCN Packaging)

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