Maximum Drain Source Voltage:
25 V
Maximum Continuous Drain Current:
150 A
Channel Mode:
Enhancement
Series:
Power
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
1.3 mO
Package Type:
PQFN8
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
8
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 25V 20A (Ta), 152A (Tc) 800mW (Ta), 48W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS1
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:
3159pF @ 13V
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 152A (Tc)
Customer Reference:
Power Dissipation (Max):
800mW (Ta), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
