Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
54 A
Transistor Material:
Si
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
12.2 mO
Package Type:
DFN5
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
5
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 100V 10.5A (Ta), 54A (Tc) 3W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.2V @ 282µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS015
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
12.2mOhm @ 14A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13380pF @ 50V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta), 54A (Tc)
Customer Reference:
Power Dissipation (Max):
3W (Ta), 79W (Tc)
Technology:
MOSFET (Metal Oxide)
