Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
110 mO
Package Type:
D2PAK-7L
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
7
Manufacturer Standard Lead Time:
13 Weeks
Detailed Description:
N-Channel 1200V 30A (Tc) 179W (Tc) Surface Mount D2PAK-7
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number:
NTBG080
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 20V
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25, -15V
Input Capacitance (Ciss) (Max) @ Vds:
1154pF @ 800V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Customer Reference:
Power Dissipation (Max):
179W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
