Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
14 A
Channel Mode:
Enhancement
Series:
NVT
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.05 O
Package Type:
WDFN8
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
N-Channel 80V 4.9A (Ta), 14A (Tc) 2.9W (Ta), 23W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 15µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NVTFS6
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
258pF @ 40V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.9A (Ta), 14A (Tc)
Customer Reference:
Power Dissipation (Max):
2.9W (Ta), 23W (Tc)
Technology:
MOSFET (Metal Oxide)