Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
103 A
Channel Mode:
Enhancement
Series:
NTTF
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0039 O
Package Type:
PQFN8
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
N-Channel 60V 16A (Ta), 103A (Tc) 2.2W (Ta), 83W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 120µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS3
Gate Charge (Qg) (Max) @ Vgs:
32.7nC @ 10V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 23A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2383pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 103A (Tc)
Customer Reference:
Power Dissipation (Max):
2.2W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
