P-Channel MOSFET Transistor, 127 mA, 20 V Depletion, 3-Pin xDFN3 ON Semiconductor NTNS2K1P021ZTCG

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
20 V
Maximum Continuous Drain Current:
127 mA
Channel Mode:
Depletion
Series:
NTN
Channel Type:
P
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
10 O
Package Type:
XDFN3
Number of Elements per Chip:
1
Pin Count:
3
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
NTNS2
Detailed Description:
P-Channel 20V 127mA (Ta) 125mW (Ta) Surface Mount 3-XDFN (0.42x0.62)
Input Capacitance (Ciss) (Max) @ Vds:
12800pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
5Ohm @ 100mA, 4.5V
Supplier Device Package:
3-XDFN (0.42x0.62)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
3-XFDFN
Power Dissipation (Max):
125mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
127mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is P-Channel MOSFET Transistor 127 mA 20 V Depletion 3-Pin xDFN3 manufactured by ON Semiconductor. The manufacturer part number is NTNS2K1P021ZTCG. It has a maximum of 20 v drain source voltage. While 127 ma of maximum continuous drain current. The product carries depletion channel mode. The product ntn, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1v of maximum gate threshold voltage. It provides up to 10 o maximum drain source resistance. The package is a sort of xdfn3. It consists of 1 elements per chip. It contains 3 pins. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: ntns2. It features p-channel 20v 127ma (ta) 125mw (ta) surface mount 3-xdfn (0.42x0.62). The product's input capacitance at maximum includes 12800pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It has a maximum Rds On and voltage of 5ohm @ 100ma, 4.5v. 3-xdfn (0.42x0.62) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 3-xfdfn. The product carries maximum power dissipation 125mw (ta). The continuous current drain at 25°C is 127ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - NTNS2K1P021ZTCG(Technical Reference)
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NTNS2K1P021Z(Datasheets)

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