Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
58 A
Channel Mode:
Enhancement
Series:
NTH
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.056 O
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Manufacturer Standard Lead Time:
33 Weeks
Detailed Description:
N-Channel 1200V 58A (Tc) 319W (Tc) Through Hole TO-247-4L
Vgs(th) (Max) @ Id:
4.3V @ 10mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Base Part Number:
NTH4L040
Gate Charge (Qg) (Max) @ Vgs:
106nC @ 20V
Rds On (Max) @ Id, Vgs:
56mOhm @ 35A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
1762pF @ 800V
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Customer Reference:
Power Dissipation (Max):
319W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
