Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
201 A
Channel Mode:
Enhancement
Series:
NTB
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.00682 O
Package Type:
D2PAK
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 100V 201A (Ta) 340W (Tc) Surface Mount D²PAK-3 (TO-263-3)
Vgs(th) (Max) @ Id:
4V @ 500µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
NTB004
Gate Charge (Qg) (Max) @ Vgs:
175nC @ 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11900pF @ 50V
Mounting Type:
Surface Mount
Supplier Device Package:
D²PAK-3 (TO-263-3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
201A (Ta)
Customer Reference:
Power Dissipation (Max):
340W (Tc)
Technology:
MOSFET (Metal Oxide)
