Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
110 A
Channel Mode:
Enhancement
Series:
NVM
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.004 O
Package Type:
DFN5
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 80V 20A (Ta), 110A (Tc) 3.8W (Ta), 116W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2V @ 140µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NVMFS6
Gate Charge (Qg) (Max) @ Vgs:
52nC @ 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2900pF @ 40V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 110A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 116W (Tc)
Technology:
MOSFET (Metal Oxide)
