Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
17 A
Channel Mode:
Enhancement
Series:
NVH
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.16 O
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 1200V 17A (Tc) 119W (Tc) Through Hole TO-247-3
Vgs(th) (Max) @ Id:
4.3V @ 2.5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
NVHL160
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 20V
Rds On (Max) @ Id, Vgs:
224mOhm @ 12A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
665pF @ 800V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Customer Reference:
Power Dissipation (Max):
119W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
This is manufactured by ON Semiconductor. The manufacturer part number is NVHL160N120SC1. It has a maximum of 1200 v drain source voltage. While 17 a of maximum continuous drain current. The product carries enhancement channel mode. The product nvh, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.16 o maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 4 pins. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 1200v 17a (tc) 119w (tc) through hole to-247-3. The typical Vgs (th) (max) of the product is 4.3v @ 2.5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: nvhl160. The maximum gate charge and given voltages include 34nc @ 20v. It has a maximum Rds On and voltage of 224mohm @ 12a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The on semiconductor's product offers user-desired applications. The product has a 1200v drain to source voltage. The maximum Vgs rate is +25v, -15v. The product's input capacitance at maximum includes 665pf @ 800v. The product is available in through hole configuration. The product automotive, aec-q101, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 17a (tc). The product carries maximum power dissipation 119w (tc). This product use sic (silicon carbide junction transistor) technology.
Reviews
Don’t hesitate to ask questions for better clarification.