Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
24 A
Channel Mode:
Enhancement
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
125 mO
Package Type:
D2-PAK
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 650V 24A (Tc) 181W (Tc) Surface Mount TO-263 (D2Pak)
Vgs(th) (Max) @ Id:
4.5V @ 590µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FCB125
Gate Charge (Qg) (Max) @ Vgs:
46nC @ 10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1940pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
TO-263 (D2Pak)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Customer Reference:
Power Dissipation (Max):
181W (Tc)
Technology:
MOSFET (Metal Oxide)
