Microsemi Corporation APT1001RBVFRG
Product Information
Rds On (Max) @ Id, Vgs:
1Ohm @ 5.5A, 10V
Detailed Description:
N-Channel 1000V 11A (Tc) Through Hole TO-247 [B]
Input Capacitance (Ciss) (Max) @ Vds:
3050pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Series:
POWER MOS V®
Gate Charge (Qg) (Max) @ Vgs:
150nC @ 10V
Supplier Device Package:
TO-247 [B]
Packaging:
Tube
FET Type:
N-Channel
Package / Case:
TO-247-3
Drain to Source Voltage (Vdss):
1000V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. We ship APT1001RBVFRG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT1001RBVFRG. It has a maximum Rds On and voltage of 1ohm @ 5.5a, 10v. It features n-channel 1000v 11a (tc) through hole to-247 [b]. The product's input capacitance at maximum includes 3050pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product power mos v®, is a highly preferred choice for users. The maximum gate charge and given voltages include 150nc @ 10v. to-247 [b] is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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