Renesas Electronics America RJK6002DPD-WS#J2
Product Information
Rds On (Max) @ Id, Vgs:
6.8Ohm @ 1A, 10V
Detailed Description:
N-Channel 600V 2A (Ta) 30W (Tc) Surface Mount MP-3A
Input Capacitance (Ciss) (Max) @ Vds:
165pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 10V
Supplier Device Package:
MP-3A
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
30W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK6002DPD-WS#J2. It has a maximum Rds On and voltage of 6.8ohm @ 1a, 10v. It features n-channel 600v 2a (ta) 30w (tc) surface mount mp-3a. The product's input capacitance at maximum includes 165pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 6.2nc @ 10v. mp-3a is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 30w (tc). The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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