ON Semiconductor 2SJ665-DL-1EX

ON Semiconductor

Product Information

Base Part Number:
2SJ665
Detailed Description:
P-Channel 100V 27A (Ta) 65W (Tc) Surface Mount TO-263-2
Input Capacitance (Ciss) (Max) @ Vds:
4200pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
77mOhm @ 14A, 10V
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
74nC @ 10V
Supplier Device Package:
TO-263-2
Packaging:
Bulk
Operating Temperature:
150°C (TA)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
65W (Tc)
Current - Continuous Drain (Id) @ 25°C:
27A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SJ665-DL-1EX. Base Part Number: 2sj665. It features p-channel 100v 27a (ta) 65w (tc) surface mount to-263-2. The product's input capacitance at maximum includes 4200pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 77mohm @ 14a, 10v. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 74nc @ 10v. to-263-2 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has 150°c (ta) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 65w (tc). The continuous current drain at 25°C is 27a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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EOL 21/Apr/2016(PCN Obsolescence/ EOL)
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2SJ665(Datasheets)

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