ON Semiconductor NTMJS1D4N06CLTWG

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
33 Weeks
Detailed Description:
N-Channel 60V 39A (Ta), 262A (Tc) 4W (Ta), 180W (Tc) Surface Mount 8-LFPAK
Vgs(th) (Max) @ Id:
2V @ 280µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Base Part Number:
NTMJS1
Gate Charge (Qg) (Max) @ Vgs:
103nC @ 10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7430pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
8-LFPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
39A (Ta), 262A (Tc)
Customer Reference:
Power Dissipation (Max):
4W (Ta), 180W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMJS1D4N06CLTWG. It has typical 33 weeks of manufacturer standard lead time. It features n-channel 60v 39a (ta), 262a (tc) 4w (ta), 180w (tc) surface mount 8-lfpak. The typical Vgs (th) (max) of the product is 2v @ 280µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. Base Part Number: ntmjs1. The maximum gate charge and given voltages include 103nc @ 10v. It has a maximum Rds On and voltage of 1.3mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7430pf @ 30v. The product is available in surface mount configuration. 8-lfpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 39a (ta), 262a (tc). The product carries maximum power dissipation 4w (ta), 180w (tc). This product use mosfet (metal oxide) technology.

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NTMJS1D4N06CL(Datasheets)

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