ON Semiconductor NVJS3151PT1G

ON Semiconductor

Product Information

Detailed Description:
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id:
1.2V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
NVJS31
Gate Charge (Qg) (Max) @ Vgs:
8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 12V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Customer Reference:
Power Dissipation (Max):
625mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NVJS3151PT1G. It features p-channel 12v 2.7a (ta) 625mw (ta) surface mount sc-88/sc70-6/sot-363. The typical Vgs (th) (max) of the product is 1.2v @ 50µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Base Part Number: nvjs31. The maximum gate charge and given voltages include 8.6nc @ 4.5v. It has a maximum Rds On and voltage of 60mohm @ 3.3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 850pf @ 12v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.7a (ta). The product carries maximum power dissipation 625mw (ta). This product use mosfet (metal oxide) technology.

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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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NTJS3151P, NVJS3151P(Datasheets)

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