Renesas Electronics America RJK0603DPN-A0#T2
Product Information
Detailed Description:
N-Channel 60V 80A (Ta) 125W (Ta) Through Hole TO-220ABA
Input Capacitance (Ciss) (Max) @ Vds:
4150pF @ 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
57nC @ 10V
Supplier Device Package:
TO-220ABA
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 40A, 10V
Operating Temperature:
150°C
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
125W (Ta)
Current - Continuous Drain (Id) @ 25°C:
80A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK0603DPN-A0#T2. It features n-channel 60v 80a (ta) 125w (ta) through hole to-220aba. The product's input capacitance at maximum includes 4150pf @ 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 57nc @ 10v. to-220aba is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. It has a maximum Rds On and voltage of 5.2mohm @ 40a, 10v. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 125w (ta). The continuous current drain at 25°C is 80a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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