SemiQ GP1M003A090PH
Product Information
Rds On (Max) @ Id, Vgs:
5.1Ohm @ 1.25A, 10V
Detailed Description:
N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
748pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Supplier Device Package:
I-PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
94W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
SemiQ
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FAQs
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Yes. We ship GP1M003A090PH Internationally to many countries around the world.
This is manufactured by SemiQ. The manufacturer part number is GP1M003A090PH. It has a maximum Rds On and voltage of 5.1ohm @ 1.25a, 10v. It features n-channel 900v 2.5a (tc) 94w (tc) through hole i-pak. The product's input capacitance at maximum includes 748pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 900v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 17nc @ 10v. i-pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 94w (tc). The continuous current drain at 25°C is 2.5a (tc). This product use mosfet (metal oxide) technology. The semiq's product offers user-desired applications.
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