Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
98 A
Channel Mode:
Enhancement
Transistor Material:
SiC
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.028 O
Package Type:
D2PAK−7L
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
13 Weeks
Detailed Description:
N-Channel 1200V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
Vgs(th) (Max) @ Id:
4.3V @ 20mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number:
NVBG020
Gate Charge (Qg) (Max) @ Vgs:
220nC @ 20V
Rds On (Max) @ Id, Vgs:
28mOhm @ 60A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
2943pF @ 800V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
D2PAK-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.6A (Ta), 98A (Tc)
Customer Reference:
Power Dissipation (Max):
3.7W (Ta), 468W (Tc)
Technology:
MOSFET (Metal Oxide)
