Maximum Continuous Drain Current:
235 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
91 @ 10 V nC
Channel Type:
N
Length:
6mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
166 W
Maximum Gate Source Voltage:
±20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.3 mO
Manufacturer Standard Lead Time:
37 Weeks
Base Part Number:
NTMFSC1
Detailed Description:
N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 8-DFN (5.1x6.15)
Input Capacitance (Ciss) (Max) @ Vds:
6660pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
91nC @ 10V
Supplier Device Package:
8-DFN (5.1x6.15)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
3.8W (Ta), 166W (Tc)
Current - Continuous Drain (Id) @ 25°C:
36A (Ta), 235A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
