Rohm Semiconductor RJ1G12BGNTLL

RJ1G12BGNTLL Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
1.86mOhm @ 50A, 10V
Detailed Description:
N-Channel 40V 120A (Tc) 178W (Tc) Surface Mount LPTL
Input Capacitance (Ciss) (Max) @ Vds:
12500pF @ 20V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 2mA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
165nC @ 10V
Supplier Device Package:
LPTL
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
178W (Tc)
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RJ1G12BGNTLL. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.86mohm @ 50a, 10v. It features n-channel 40v 120a (tc) 178w (tc) surface mount lptl. The product's input capacitance at maximum includes 12500pf @ 20v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 2ma. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 165nc @ 10v. lptl is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 178w (tc). The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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