ON Semiconductor NTMYS010N04CLTWG
Product Information
Maximum Continuous Drain Current:
38 A
Width:
4.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
LFPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
7.3 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
28 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
17.6 mO
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 40V 14A (Ta), 38A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount 4-LFPAK
Vgs(th) (Max) @ Id:
2V @ 20µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Base Part Number:
NTMYS010
Gate Charge (Qg) (Max) @ Vgs:
7.3nC @ 10V
Rds On (Max) @ Id, Vgs:
10.3mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
4-LFPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 38A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 28W (Tc)
Technology:
MOSFET (Metal Oxide)
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET18381610 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18381610.
Yes. We ship NTMYS010N04CLTWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMYS010N04CLTWG. While 38 a of maximum continuous drain current. Furthermore, the product is 4.25mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of lfpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 7.3 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 28 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 17.6 mo maximum drain source resistance. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 40v 14a (ta), 38a (tc) 3.8w (ta), 28w (tc) surface mount 4-lfpak. The typical Vgs (th) (max) of the product is 2v @ 20µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1023, 4-lfpak. Base Part Number: ntmys010. The maximum gate charge and given voltages include 7.3nc @ 10v. It has a maximum Rds On and voltage of 10.3mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 570pf @ 25v. 4-lfpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 14a (ta), 38a (tc). The product carries maximum power dissipation 3.8w (ta), 28w (tc). This product use mosfet (metal oxide) technology.
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