Maximum Continuous Drain Current:
316 A
Width:
5mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
86 @ 10 V nC
Channel Type:
N
Length:
5.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
166 W
Maximum Gate Source Voltage:
±20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.3 mO
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 40V 50A (Ta), 316A (Tc) 4.1W (Ta), 166W (Tc) Surface Mount 8-DFN (5.1x6.15)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
NVMFSC0
Gate Charge (Qg) (Max) @ Vgs:
86nC @ 10V
Rds On (Max) @ Id, Vgs:
870µOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6100pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-DFN (5.1x6.15)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
50A (Ta), 316A (Tc)
Customer Reference:
Power Dissipation (Max):
4.1W (Ta), 166W (Tc)
Technology:
MOSFET (Metal Oxide)
