Rohm Semiconductor RQ3E100ATTB

RQ3E100ATTB Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 30V 10A (Ta), 31A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
RQ3E100
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
11.4mOhm @ 10A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 31A (Tc)
Customer Reference:
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3E100ATTB. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 30v 10a (ta), 31a (tc) 2w (ta) surface mount 8-hsmt (3.2x3). The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: rq3e100. The maximum gate charge and given voltages include 42nc @ 10v. It has a maximum Rds On and voltage of 11.4mohm @ 10a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1900pf @ 15v. The product is available in surface mount configuration. 8-hsmt (3.2x3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta), 31a (tc). The product carries maximum power dissipation 2w (ta). This product use mosfet (metal oxide) technology.

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RQ3E100AT Datasheet(Datasheets)

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