Microsemi Corporation MSC280SMA120B
Product Information
Detailed Description:
N-Channel 1.2kV 9.4A (Tc) 55W (Tc) Through Hole TO-247-3
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 1000V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Drain to Source Voltage (Vdss):
1.2kV
Vgs (Max):
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 20V
Supplier Device Package:
TO-247-3
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
350mOhm @ 5A, 20V
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-247-3
Power Dissipation (Max):
55W (Tc)
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Microsemi Corporation
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Yes. We ship MSC280SMA120B Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is MSC280SMA120B. It features n-channel 1.2kv 9.4a (tc) 55w (tc) through hole to-247-3. The product's input capacitance at maximum includes 300pf @ 1000v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has a 1.2kv drain to source voltage. The maximum Vgs rate is +25v, -10v. The maximum gate charge and given voltages include 20nc @ 20v. to-247-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. It has a maximum Rds On and voltage of 350mohm @ 5a, 20v. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 55w (tc). The continuous current drain at 25°C is 9.4a (tc). This product use sicfet (silicon carbide) technology. The microsemi corporation's product offers user-desired applications.
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