ON Semiconductor NTMTS001N06CTXG
Product Information
Maximum Continuous Drain Current:
376 A
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
Power 88
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
113 nC @ 10 V
Channel Type:
N
Length:
8.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
244 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
910 μΩ
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
N-Channel 60V 53.7A (Ta), 376A (Tc) 5W (Ta), 244W (Tc) Surface Mount 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
NTMTS00
Gate Charge (Qg) (Max) @ Vgs:
113nC @ 10V
Rds On (Max) @ Id, Vgs:
0.91mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8705pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
53.7A (Ta), 376A (Tc)
Customer Reference:
Power Dissipation (Max):
5W (Ta), 244W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship NTMTS001N06CTXG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMTS001N06CTXG. While 376 a of maximum continuous drain current. Furthermore, the product is 8mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of power 88. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 113 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 8.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 244 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 910 μω maximum drain source resistance. It has typical 41 weeks of manufacturer standard lead time. It features n-channel 60v 53.7a (ta), 376a (tc) 5w (ta), 244w (tc) surface mount 8-dfnw (8.3x8.4). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: ntmts00. The maximum gate charge and given voltages include 113nc @ 10v. It has a maximum Rds On and voltage of 0.91mohm @ 50a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 8705pf @ 30v. 8-dfnw (8.3x8.4) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 53.7a (ta), 376a (tc). The product carries maximum power dissipation 5w (ta), 244w (tc). This product use mosfet (metal oxide) technology.
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