Maximum Continuous Drain Current:
6.9 A
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
UDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.7 nC @ 4.5 V
Channel Type:
N
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.49 W
Maximum Gate Source Voltage:
±20 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
26 mΩ
Detailed Description:
N-Channel 30V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Base Part Number:
NTLUS030
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 15V
Mounting Type:
Surface Mount
Series:
µCool™
Supplier Device Package:
6-UDFN (1.6x1.6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Customer Reference:
Power Dissipation (Max):
640mW (Ta)
Technology:
MOSFET (Metal Oxide)
