Renesas Electronics America RQK0609CQDQS#H1
Product Information
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
Detailed Description:
N-Channel 60V 4A (Ta) 1.5W (Ta) Surface Mount UPAK
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Supplier Device Package:
UPAK
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-243AA
Power Dissipation (Max):
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RQK0609CQDQS#H1. It has a maximum Rds On and voltage of 100mohm @ 2a, 4.5v. It features n-channel 60v 4a (ta) 1.5w (ta) surface mount upak. The product's input capacitance at maximum includes 470pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.4v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 5nc @ 4.5v. upak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-243aa. The product carries maximum power dissipation 1.5w (ta). The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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