Rohm Semiconductor SCT3022KLGC11

Rohm Semiconductor

Product Information

Base Part Number:
SCT3022
Detailed Description:
N-Channel 1200V 95A (Tc) 427W Through Hole TO-247N
Input Capacitance (Ciss) (Max) @ Vds:
2879pF @ 800V
Drive Voltage (Max Rds On, Min Rds On):
18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5.6V @ 18.2mA
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+22V, -4V
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 10V
Rds On (Max) @ Id, Vgs:
28.6mOhm @ 36A, 18V
Supplier Device Package:
TO-247N
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
427W
Current - Continuous Drain (Id) @ 25°C:
95A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SCT3022KLGC11. Base Part Number: sct3022. It features n-channel 1200v 95a (tc) 427w through hole to-247n. The product's input capacitance at maximum includes 2879pf @ 800v. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.6v @ 18.2ma. The product has a 1200v drain to source voltage. The maximum Vgs rate is +22v, -4v. The maximum gate charge and given voltages include 178nc @ 10v. It has a maximum Rds On and voltage of 28.6mohm @ 36a, 18v. to-247n is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 427w. The continuous current drain at 25°C is 95a (tc). This product use sicfet (silicon carbide) technology. The rohm semiconductor's product offers user-desired applications.

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SCT3022KL(Datasheets)

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