Maximum Continuous Drain Current:
420 A
Width:
8mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DFNW
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
140 nC @ 10 V
Channel Type:
N
Length:
8.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
205 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
670 μΩ
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 40V 51A (Ta), 430A (Tc) 3.9W (Ta), 273W (Tc) Surface Mount 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
NVMTS0
Gate Charge (Qg) (Max) @ Vgs:
140nC @ 10V
Rds On (Max) @ Id, Vgs:
0.67mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9281pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-DFNW (8.3x8.4)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
51A (Ta), 430A (Tc)
Customer Reference:
Power Dissipation (Max):
3.9W (Ta), 273W (Tc)
Technology:
MOSFET (Metal Oxide)
