Maximum Continuous Drain Current:
553.8 A
Width:
8mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
DFNW
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
163 nC @ 4.5
Channel Type:
N
Length:
8.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
244 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
640 μΩ
Manufacturer Standard Lead Time:
37 Weeks
Detailed Description:
N-Channel 40V 553.8A (Tc) 5W (Ta) Surface Mount 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
NVMTS0
Gate Charge (Qg) (Max) @ Vgs:
163nC @ 4.5V
Rds On (Max) @ Id, Vgs:
0.4mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
20600pF @ 20V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
553.8A (Tc)
Customer Reference:
Power Dissipation (Max):
5W (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NVMTS0D4N04CLTXG. While 553.8 a of maximum continuous drain current. Furthermore, the product is 8mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of dfnw. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 163 nc @ 4.5. The product is available in [Cannel Type] channel. Its accurate length is 8.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 244 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 640 μω maximum drain source resistance. It has typical 37 weeks of manufacturer standard lead time. It features n-channel 40v 553.8a (tc) 5w (ta) surface mount 8-dfnw (8.3x8.4). The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: nvmts0. The maximum gate charge and given voltages include 163nc @ 4.5v. It has a maximum Rds On and voltage of 0.4mohm @ 50a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 20600pf @ 20v. The product automotive, aec-q101, is a highly preferred choice for users. 8-dfnw (8.3x8.4) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 553.8a (tc). The product carries maximum power dissipation 5w (ta). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.