ON Semiconductor NTMTS0D6N04CLTXG
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
126 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
245.4 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
N
Width:
8mm
Length:
8.1mm
Maximum Drain Source Resistance:
660 μΩ
Package Type:
DFNW
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
554.5 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Height:
1.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
NTMTS0D
Detailed Description:
N-Channel 40V 554.5A 5W
Input Capacitance (Ciss) (Max) @ Vds:
16013pF @ 20V
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
126nC @ 4.5V
Rds On (Max) @ Id, Vgs:
0.42mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power Dissipation (Max):
5W
Current - Continuous Drain (Id) @ 25°C:
554.5A
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMTS0D6N04CLTXG. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 126 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 245.4 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 8mm wide. Its accurate length is 8.1mm. It provides up to 660 μω maximum drain source resistance. The package is a sort of dfnw. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 554.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. Its forward diode voltage is 1.2v . In addition, the height is 1.15mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 39 weeks of manufacturer standard lead time. Base Part Number: ntmts0d. It features n-channel 40v 554.5a 5w. The product's input capacitance at maximum includes 16013pf @ 20v. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 126nc @ 4.5v. It has a maximum Rds On and voltage of 0.42mohm @ 50a, 10v. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. The product carries maximum power dissipation 5w. The continuous current drain at 25°C is 554.5a. This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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