Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
181 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
4.5V
Channel Type:
N
Width:
8mm
Length:
8mm
Maximum Drain Source Resistance:
125 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Minimum Gate Threshold Voltage:
2.5V
Forward Diode Voltage:
1.2V
Height:
1.05mm
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 650V 24A (Tc) 181W (Tc) Surface Mount 4-PQFN (8x8)
Vgs(th) (Max) @ Id:
4.5V @ 590µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Base Part Number:
FCMT125
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1920pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
4-PQFN (8x8)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Customer Reference:
Power Dissipation (Max):
181W (Tc)
Technology:
MOSFET (Metal Oxide)
