Maximum Continuous Drain Current:
300 A
Width:
11.78mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
MO-299A
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 10 V
Channel Type:
N
Length:
9.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
429 W
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
570 μΩ
Detailed Description:
N-Channel 40V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Base Part Number:
NVBLS0
Gate Charge (Qg) (Max) @ Vgs:
296nC @ 10V
Rds On (Max) @ Id, Vgs:
0.57mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
15900pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-HPSOF
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
Customer Reference:
Power Dissipation (Max):
429W (Tj)
Technology:
MOSFET (Metal Oxide)
