Transphorm TP65H050WS
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
60mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
119W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 400 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP65H050
ECCN:
EAR99
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FAQs
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You can order Transphorm brand products with TP65H050WS directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Transphorm TP65H050WS. You can also check on our website or by contacting our customer support team for further order details on Transphorm TP65H050WS.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17518568 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Transphorm" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17518568.
Yes. We ship TP65H050WS Internationally to many countries around the world.
This is manufactured by Transphorm. The manufacturer part number is TP65H050WS. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.8v @ 700µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 60mohm @ 22a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 12v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 119w (tc). The product's input capacitance at maximum includes 1000 pf @ 400 v. It has a long 16 weeks standard lead time. The product is available in through hole configuration. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 34a (tc). This product use ganfet (cascode gallium nitride fet) technology. Moreover, it corresponds to tp65h050, a base product number of the product. The product is designated with the ear99 code number.
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