FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor

FCU360N65S3R0  N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor
FCU360N65S3R0
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
10 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
6.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mΩ
Manufacturer Standard Lead Time:
49 Weeks
Base Part Number:
FCU360
Detailed Description:
10A (Tc) Through Hole I-PAK
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Package / Case:
TO-251-3 Stub Leads, IPak
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 10 A 650 V 3-Pin IPAK manufactured by ON Semiconductor. The manufacturer part number is FCU360N65S3R0. While 10 a of maximum continuous drain current. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 83 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 6.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 360 mω maximum drain source resistance. It has typical 49 weeks of manufacturer standard lead time. Base Part Number: fcu360. It features 10a (tc) through hole i-pak. The product superfet® iii, is a highly preferred choice for users. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 10a (tc). Moreover, the product comes in to-251-3 stub leads, ipak. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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Datasheet FCU360N65S3R0(Technical Reference)
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FCU360N65S3R0(Datasheets)
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SuperFet Datasheet Chg 30/Jul/2019(PCN Design/Specification)

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FAQs

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You will get a confirmation email regarding your order of FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor. You can also check on our website or by contacting our customer support team for further order details on FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16951068 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16951068.
Yes. We ship FCU360N65S3R0 Internationally to many countries around the world.