This is manufactured by IXYS-RF. The manufacturer part number is IXFX55N50F. It has a maximum Rds On and voltage of 85mohm @ 27.5a, 10v. It features n-channel 500v 55a (tc) 560w (tc) through hole plus247™-3. The product's input capacitance at maximum includes 6700pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.5v @ 8ma. The product hiperrf™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 195nc @ 10v. plus247™-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 560w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. The ixys-rf's product offers user-desired applications.
Mult Dev EOL 18/Jan/2019(PCN Obsolescence/ EOL)
IXF(K,X)55N50F(Datasheets)
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You will get a confirmation email regarding your order of IXYS-RF IXFX55N50F. You can also check on our website or by contacting our customer support team for further order details on IXYS-RF IXFX55N50F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16694021 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS-RF" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16694021.
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This is manufactured by IXYS-RF. The manufacturer part number is IXFX55N50F. It has a maximum Rds On and voltage of 85mohm @ 27.5a, 10v. It features n-channel 500v 55a (tc) 560w (tc) through hole plus247™-3. The product's input capacitance at maximum includes 6700pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.5v @ 8ma. The product hiperrf™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 195nc @ 10v. plus247™-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 560w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. The ixys-rf's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.