Nexperia USA Inc. PH20100S,115
Product Information
Rds On (Max) @ Id, Vgs:
23mOhm @ 10A, 10V
Detailed Description:
N-Channel 100V 34.3A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
Input Capacitance (Ciss) (Max) @ Vds:
2264pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 1mA
Series:
TrenchMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Supplier Device Package:
LFPAK56, Power-SO8
Packaging:
Cut Tape (CT)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-100, SOT-669
Power Dissipation (Max):
62.5W (Tc)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
34.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Nexperia USA Inc.
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship PH20100S,115 Internationally to many countries around the world.
This is manufactured by Nexperia USA Inc.. The manufacturer part number is PH20100S,115. It has a maximum Rds On and voltage of 23mohm @ 10a, 10v. It features n-channel 100v 34.3a (tc) 62.5w (tc) surface mount lfpak56, power-so8. The product's input capacitance at maximum includes 2264pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product trenchmos™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 39nc @ 10v. lfpak56, power-so8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 62.5w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 34.3a (tc). This product use mosfet (metal oxide) technology. The nexperia usa inc.'s product offers user-desired applications.
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