Microsemi Corporation APT1003RKLLG
Product Information
Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
Detailed Description:
N-Channel 1000V 4A (Tc) 139W (Tc) Through Hole TO-220 [K]
Input Capacitance (Ciss) (Max) @ Vds:
694pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 1mA
Series:
POWER MOS 7®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Supplier Device Package:
TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
139W (Tc)
Drain to Source Voltage (Vdss):
1000V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT1003RKLLG. It has a maximum Rds On and voltage of 3ohm @ 2a, 10v. It features n-channel 1000v 4a (tc) 139w (tc) through hole to-220 [k]. The product's input capacitance at maximum includes 694pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product power mos 7®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 34nc @ 10v. to-220 [k] is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 139w (tc). The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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