Rohm Semiconductor RJ1U330AAFRGTL

RJ1U330AAFRGTL Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 250V 33A (Ta) 211W (Tc) Surface Mount LPTS
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 16.5A, 10V
FET Type:
N-Channel
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4500pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
LPTS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta)
Customer Reference:
Power Dissipation (Max):
211W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RJ1U330AAFRGTL. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 250v 33a (ta) 211w (tc) surface mount lpts. The typical Vgs (th) (max) of the product is 5v @ 1ma. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 80nc @ 10v. It has a maximum Rds On and voltage of 105mohm @ 16.5a, 10v. It carries FET type n-channel. The rohm semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 4500pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. lpts is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 33a (ta). The product carries maximum power dissipation 211w (tc). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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RJ1U330AAFRG ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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LPTS TL Taping Spec(Datasheets)
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RJ1U330AAFRGTL(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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AEC-Q101 Automotive Requirements(Other Related Documents)
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LPTS Part Marking(Other Related Documents)

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